Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

Publications

10. Mohammadi, M., Stoll, S.L., Herrero, A.F., Khan, S., Fabrizi, F., Gollwitzer, C., Wang, Z., Anantharaman, S.B., Lemme, M.C., 2025. Wafer-scale Synthesis of Mithrene and its Application in 2D Heterostructure UV Photodetectors. preprint; DOI: 10.1002/adfm.202517857

9. Kavand, N., Darjani, A., Niranjan, T., Kumar, A., 2025. RAT: RFET-based Analog Hardware Trojan, in: 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). Presented at the 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), IEEE, Kalamata, Greece, pp. 1–6.; DOI: 10.1109/ISVLSI65124.2025.11130296

8. Farzaneh, H., Khan, A.A., Castrillon, J., 2025. CoMoNM: A Cost Modeling Framework for Compute-Near-Memory Systems. DOI: 10.48550/arXiv.2508.11451

7. Fabrizi, F., Goudarzi, S., Khan, S., Mohammad, T., Starodubtceva, L., Cegielski, P.J., Thiel, F., Özen, S., Schiffer, M., Lang, F., Bolívar, P.H., Riedl, T., Müller-Newen, G., Anantharaman, S.B., Mohammadi, M., Lemme, M.C., 2025. A Versatile Top-Down Patterning Technique for Perovskite On-Chip Integration. ACS Nano 19, 30428–30440. DOI: 10.1021/acsnano.5c10397

6. de Lima, J.P.C., Moghadam, M.S., Aygun, S., Castrillon, J., Najafi, M.H., Khan, A.A., 2025. All-in-Memory Stochastic Computing using ReRAM. DOI: 10.48550/arXiv.2504.08340

5.  Darjani, A., Kavand, N., Kumar, A., 2025b. Flip-UnLock: An Anomaly Detection Attack on Flip-Flop-Based Logic Locking, in: 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). Presented at the 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 1–6. DOI: 10.1109/ISVLSI65124.2025.11130332

4. Darjani, A., Kavand, N., Kumar, A., 2025a. Flip-Break: Breaking Flip-flop-based Logic Locking in Sequential Circuits, in: Proceedings of the Great Lakes Symposium on VLSI 2025. Presented at the GLSVLSI ’25: Great Lakes Symposium on VLSI 2025, ACM, New Orleans LA USA, pp. 463–469.

3. Castrillon, J., 205 AD. Compiler Support for Ferroelectric Compute-in-Memory Solutions (and beyond).

2. Buczek, M., Moos, Z., Gutsche, A., Menzel, S., Dittmann, R., 2025. Pr 1– x Ca x MnO3 -Based Memristive Heterostructures: Basic Mechanisms and Applications. Chem. Rev. 125, 6156–6202.

1. Ascoli, A., Gemo, E., Corinto, F., Bonnin, M., Gilli, M., Civalleri, P.P., Demirkol, A.S., Messaris, I., Ntinas, V., Prousalis, D., Tetzlaff, R., Slesazeck, S., Mikolajick, T., Chua, L., 2025. Ndr Effects in a Locally-Active Memristor Induce Small-Signal Amplification in a Simple Cell, in: 2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST). Presented at the 2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST), IEEE, Dresden, Germany, pp. 1–9.