A07 Vertical Perovskite Field-Effect Transistors
For high frequency applications a vertical device architecture with very small dimensions is more beneficial compared to lateral device architectures. Perovskite materials have had great success in the field of improved solar cells. However, their application to other semiconductor devices is not explored in the same way. They offer distinct benefits in terms of integration technology for the BEOL. Based on the leading activities in perovskite solar cells at TUD and the integration know-how at AMO (M. Mohammadi), here a novel, vertical device concept utilizing perovskites will be at the center of the research. Within the TRR the project will demonstrate the concept in Phase 1 and supply vertical devices with medium to high performance.
Thomas Mikolajick
TU Dresden // naMLab gGmbH
Supriya Chakraborty
Chair of Integrated Digital Systems and Circuit Design | RWTH Aachen
Harald Krüger
Aufsichtsrats der Deutschen Telekom AG // Deutschen Lufthansa AG
Berufs- und Karriereeinstieg unter volatilen wirtschaftlichen Rahmenbedingungen