A06 2D Field-Effect Transistors

2D materials promise further device scaling and improvement of device performance and are already considered for future electronics. The group at AMO in Aachen is a leader in the research on practical devices based on 2D materials. Since here the channel material is decoupled from the wafer, integration into the BEOL is a natural choice although some significant issues remain to be solved. Within the TRR this project will supply lateral devices with different performance levels.

Prof.
Xinliang Feng

Molecular Functional Materials

Project Leader

A06

Prof.
Max Lemme

(Co-Speaker)

Electronic Devices

Project Leader

A06 C01 Z

Dongqi Li

Postdoc

Project

A06

Kexin Zhou

PhD Student

Project

A06